ESE PhD Thesis Defense – “Design and Characterization of AlScN-Based Ferroelectric Devices for Non-Volatile Memory Applications”
/
Room 221, Singh Center for Nanotechnology
3205 Walnut Street, Philadelphia, PA, United States
Ferroelectric materials have emerged as promising candidates for next-generation non-volatile memory technologies due to their intrinsic remnant polarization and fast switching dynamics. Among them, aluminum scandium nitride (AlScN) stands out […]

