BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Penn Engineering Events - ECPv6.15.19//NONSGML v1.0//EN
CALSCALE:GREGORIAN
METHOD:PUBLISH
X-WR-CALNAME:Penn Engineering Events
X-ORIGINAL-URL:https://seasevents.nmsdev7.com
X-WR-CALDESC:Events for Penn Engineering Events
REFRESH-INTERVAL;VALUE=DURATION:PT1H
X-Robots-Tag:noindex
X-PUBLISHED-TTL:PT1H
BEGIN:VTIMEZONE
TZID:America/New_York
BEGIN:DAYLIGHT
TZOFFSETFROM:-0500
TZOFFSETTO:-0400
TZNAME:EDT
DTSTART:20180311T070000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0400
TZOFFSETTO:-0500
TZNAME:EST
DTSTART:20181104T060000
END:STANDARD
BEGIN:DAYLIGHT
TZOFFSETFROM:-0500
TZOFFSETTO:-0400
TZNAME:EDT
DTSTART:20190310T070000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0400
TZOFFSETTO:-0500
TZNAME:EST
DTSTART:20191103T060000
END:STANDARD
BEGIN:DAYLIGHT
TZOFFSETFROM:-0500
TZOFFSETTO:-0400
TZNAME:EDT
DTSTART:20200308T070000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0400
TZOFFSETTO:-0500
TZNAME:EST
DTSTART:20201101T060000
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTART;TZID=America/New_York:20191030T110000
DTEND;TZID=America/New_York:20191030T120000
DTSTAMP:20260408T093935
CREATED:20190916T161056Z
LAST-MODIFIED:20190916T161056Z
UID:1939-1572433200-1572436800@seasevents.nmsdev7.com
SUMMARY:Sigma Aldrich Lecture: "Epitaxy by Design: Epitaxial Growth of Dissimilar Materials"
DESCRIPTION:Abstract:   The ability to integrate dissimilar materials with different crystal structures and properties enables heterostructures to be developed with new functionality well beyond the normal band gap engineering offered by semiconductor heterostructures. The combination of metals\, semiconductors\, insulators\, magnetic\, piezoelectric\, structural and phase change materials offers the potential for nearly limitless control of device properties. Heusler compounds\, for example\, are of great interest due to their multifunctional properties including metallic\, ferromagnetic\, half metallic\, semiconducting and potentially topological properties. Heterostructures of ferromagnetic materials with insulators and semiconductors have revolutionized spintronic devices. \nSemiconductors are an ideal choice for substrates for dissimilar materials epitaxial growth because of their wide range of lattice parameters\, high quality\, readily controlled electrical and optical properties and the availability of large area substrates at a reasonable cost. The control of strain and lattice matching\, interfacial bonding and reactions is important for the growth and properties of dissimilar materials heterostructures. \nIn this presentation\, results for the molecular beam epitaxial growth of metallic compound/III-V semiconductor heterostructures with designer properties will be discussed. High efficiency electrical spin injection and detection in magnetic Heusler/GaAs contacts\, tuning of the spin polarization\, as well as the ability to tune the electronic and magnetic properties of Heusler compounds through alloying will be presented. The focus of the presentation will be on understanding the growth and properties of dissimilar materials with emphasis on Heusler compound/III-V compound semiconductor heterostructures. These studies have aimed at tailoring of interfacial and material properties of these dissimilar materials heterostructures for targeting novel applications including spintronics and topological quantum computing.
URL:https://seasevents.nmsdev7.com/event/sigma-aldrich-lecture-epitaxy-by-design-epitaxial-growth-of-dissimilar-materials/
LOCATION:Glandt Forum\, Singh Center for Nanotechnology\, 3205 Walnut Street\, Philadelphia\, PA\, 19104\, United States
CATEGORIES:Distinguished Lecture
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