Wide bandgap electronics are currently under development due to their potential to create some of the most advanced RF and power electronics in the world. A key concern in their development is the control of the junction temperature during operation which is impacted by the internal device thermal resistance. To address this concern, we will discuss advancements in thermal characterization techniques that have allowed new insights into the role of material interfaces on the thermal response of electronic devices made from GaN, AlGaN, and Ga2O3. While combining these semiconductors with high thermal conductivity like AlN, SiC or diamond have promise for improving heat dissipation, manufacturing challenges exist that must be addressed. We will discuss a few of these methods of integration ranging from direct growth to plasma activated bonding. Finally, for power electronics, packaging solutions for the thermal management of ultrawide bandgap devices will be presented, allowing for the future implementation of this technology.