BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Penn Engineering Events - ECPv6.16.3//NONSGML v1.0//EN
CALSCALE:GREGORIAN
METHOD:PUBLISH
X-WR-CALNAME:Penn Engineering Events
X-ORIGINAL-URL:https://seasevents.nmsdev7.com
X-WR-CALDESC:Events for Penn Engineering Events
REFRESH-INTERVAL;VALUE=DURATION:PT1H
X-Robots-Tag:noindex
X-PUBLISHED-TTL:PT1H
BEGIN:VTIMEZONE
TZID:America/New_York
BEGIN:DAYLIGHT
TZOFFSETFROM:-0500
TZOFFSETTO:-0400
TZNAME:EDT
DTSTART:20240310T070000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0400
TZOFFSETTO:-0500
TZNAME:EST
DTSTART:20241103T060000
END:STANDARD
BEGIN:DAYLIGHT
TZOFFSETFROM:-0500
TZOFFSETTO:-0400
TZNAME:EDT
DTSTART:20250309T070000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0400
TZOFFSETTO:-0500
TZNAME:EST
DTSTART:20251102T060000
END:STANDARD
BEGIN:DAYLIGHT
TZOFFSETFROM:-0500
TZOFFSETTO:-0400
TZNAME:EDT
DTSTART:20260308T070000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0400
TZOFFSETTO:-0500
TZNAME:EST
DTSTART:20261101T060000
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTART;TZID=America/New_York:20251104T110000
DTEND;TZID=America/New_York:20251104T120000
DTSTAMP:20260601T205849
CREATED:20250730T152406Z
LAST-MODIFIED:20250730T152406Z
UID:14241-1762254000-1762257600@seasevents.nmsdev7.com
SUMMARY:ESE Fall Seminar - "Diamond and GaN: Wide-Bandgap Allies for Thermal and Power Management from Devices to 3D-Stacked Chips"
DESCRIPTION:Once considered exotic\, diamond and gallium nitride (GaN) have become practical enablers for next-generation electronic systems. Their convergence—diamond providing exceptional thermal conductivity and GaN delivering high-efficiency power conversion—lays the groundwork for integrated thermal–power co-design. As computing\, RF\, and high-performance systems push toward higher power densities\, conventional packaging and cooling approaches struggle to manage buried hotspots and multilayer bottlenecks. In this talk\, I’ll share our journey that began in 2015 with an unconventional idea—integrating thin-film polycrystalline diamond directly onto GaN high-electron-mobility transistors (HEMTs) while preserving their functionality. This effort led to some of our most significant findings\, including the development of a low-temperature (400–500 °C)\, back-end-of-line (BEOL)–compatible diamond growth platform\, now extended to silicon\, oxides\, and nitrides. Our “all-around” diamond-integrated GaN HEMTs achieved an average channel-temperature reduction of ~70 °C at 25 W/mm (DC) (IEDM ’22\, ’23)\, while workload-representative\, heater-based experiments demonstrated nearly a tenfold reduction in temperature rise within 3D architectures (IEDM ’24). In collaboration with Prof. Mitra’s team\, we are advancing the thermal scaffolding paradigm for 3D chips—a concept that merges materials innovation with architectural design. It is exciting to build upon nearly two decades of GaN and diamond research—dating back to my Ph.D. work on vertical GaN transistors—and to see it evolving toward compact\, energy-efficient\, and thermally optimized electronics for the AI datacenter era. Much of our research has been carried out in close collaboration with industry partners\, and some of our GaN efforts have already transitioned into industrial applications. I will also share some of the key lessons learned along the way\, as well as the challenges that continue to shape this evolving field.
URL:https://seasevents.nmsdev7.com/event/ese-fall-seminar-title-tba-5/
LOCATION:Raisler Lounge (Room 225)\, Towne Building\, 220 South 33rd Street\, Philadelphia\, PA\, 19104\, United States
CATEGORIES:Colloquium,Symposium
ORGANIZER;CN="Electrical and Systems Engineering":MAILTO:eseevents@seas.upenn.edu
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