ESE Fall Seminar – “Diamond and GaN: Wide-Bandgap Allies for Thermal and Power Management from Devices to 3D-Stacked Chips”
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Raisler Lounge (Room 225), Towne Building
220 South 33rd Street, Philadelphia, PA, United States
Once considered exotic, diamond and gallium nitride (GaN) have become practical enablers for next-generation electronic systems. Their convergence—diamond providing exceptional thermal conductivity and GaN delivering high-efficiency power conversion—lays the groundwork for integrated thermal–power co-design. As computing, RF, and high-performance systems push toward higher power densities, conventional packaging and cooling approaches struggle to manage buried hotspots […]

