ESE PhD Thesis Defense – “Design and Characterization of AlScN-Based Ferroelectric Devices for Non-Volatile Memory Applications”
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Room 221, Singh Center for Nanotechnology
3205 Walnut Street, Philadelphia, PA, United States
Ferroelectric materials have emerged as promising candidates for next-generation non-volatile memory technologies due to their intrinsic remnant polarization and fast switching dynamics. Among them, aluminum scandium nitride (AlScN) stands out for its CMOS compatibility, low growth temperature, exceptional thermal stability and high remnant polarization compared to conventional perovskite and hafnia-based ferroelectrics. In this dissertation, I […]

