MSE Seminar: “Aluminum Scandium Nitride Thin Films and Microdevices for Radio Frequency Filters and Magnetoelectric Sensors”
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Wu and Chen Auditorium (Room 101), Levine Hall
3330 Walnut Street, Philadelphia, PA, United States
Aluminum Nitride (AlN) is a well-established thin film piezoelectric material. AlN bulk acoustic wave (BAW) radio frequency (RF) filters were one of the key innovations that enabled the 3G and 4G smart phone revolution. Recently, the substitutional doping of scandium (Sc) for aluminum (Al) to form aluminum scandium nitride (AlScN) has been studied to significantly […]

