Gallium nitride (GaN) nanoelectronics have operated at temperatures as high as 1000°C making it a viable platform for robust space-grade (“tiny-but-tough”) electronics and nano-satellites. Even with these major technological breakthroughs, we have just begun the “GaN revolution.” New communities are adopting this nanoelectronic platform for a multitude of emerging device applications including the following: sensing, energy harvesting, actuation, and communication. In this talk, we will review and discuss the benefits of GaN’s two-dimensional electron gas (2DEG) over silicon’s p-n junction for space exploration applications (e.g., radiation-hardened, temperature-tolerant Venus probes). In addition, we will discuss the use of 2D materials such as graphene in space exploration applications, as well as the potential for synthesis of graphene mesostructures in prolonged microgravity environments on the International Space Station (ISS).